SPI11N65C3(2003) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
SPI11N65C3 Datasheet PDF : 14 Pages
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SPP11N65C3, SPA11N65C3
SPI11N65C3
21 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
785 SPP11N65C3
V
745
22 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
300
W
725
200
705
685
150
665
100
645
625
50
605
585
-60 -20 20
60 100
23 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
Ciss
10 3
10 2
Coss
10 1
Crss
10 0
0
100 200 300 400
°C
180
Tj
0
10
4
10 5
24 Typ. Coss stored energy
Eoss=f(VDS)
Hz
10 6
f
7.5
µJ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
V
600
0
VDS
Page 10
100 200 300 400
V
600
VDS
2003-08-15
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