SPI07N60C3XKSA1(2007) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPI07N60C3XKSA1
(Rev.:2007)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP07N60C3

SPI07N60C3, SPA07N60C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

10

Ω

4V

10 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 4.6 A, VGS = 10 V

SPP07N60C3

3.4

Ω

4.5V

8

2.8

7

2.4

5V

6

2

6V

5

6.5V

1.6

8V

4

5.5V

20V

1.2

3

0.8

2

1

0.4

98%

typ

0

0 2 4 6 8 10 12 A 15

ID

0

-60 -20 20

60 100 °C

180

Tj

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

24

A

20

25°C

18

16

14

12

10

8

150°C

12 Typ. gate charge

VGS = f (QGate)

parameter: ID = 7.3 A pulsed

SPP07N60C3

16

V

12

0,2 VDS max

10

0,8 VDS max

8

6

6

4

4

2

0

0 2 4 6 8 10 12 14 16 V 20

VGS

2

0

0 4 8 12 16 20 24 28 nC 34

QGate

Rev. 3.1

Page 7

2007-08-30

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