SPI20N60C3 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPI20N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Electrical Characteristics

Parameter

Symbol Conditions

Inverse diode continuous

forward current

Inverse diode direct current,

pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

IS

TC=25°C

ISM

VSD

trr

Qrr

I rrm

dirr/dt

VGS=0V, IF=IS

VR=480V, IF=IS ,

diF/dt=100A/µs

Tj=25°C

Values

Unit

min. typ. max.

-

- 20.7 A

-

- 62.1

-

1 1.2 V

- 500 800 ns

-

11

- µC

-

70

-A

- 1400 - A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

SPP_B_I

SPA

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.00769

0.015

0.029

0.114

0.136

0.059

0.00769 K/W Cth1

0.015

Cth2

0.029

Cth3

0.163

Cth4

0.323

Cth5

2.526

Cth6

Value

Unit

SPP_B_I

SPA

0.0003763 0.0003763 Ws/K

0.001411 0.001411

0.001931 0.001931

0.005297 0.005297

0.012

0.008453

0.091

0.412

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Page 4

2003-10-08

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