SM4T22 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
SM4T22 Datasheet PDF : 7 Pages
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SM4Txx
TYPES
Uni
Bi
directional * directional *
SM4T68 SN SM4T68C WN
SM4T68A SP SM4T68CA WP
SM4T100 SW SM4T100C WW
SM4T100A SX SM4T100CA WX
SM4T150 TH SM4T150C XH
SM4T150A TK SM4T150CA XK
SM4T200 TS SM4T200C XS
SM4T200A TT SM4T200CA XT
SM4T220 TU SM4T220C XU
SM4T220A TV SM4T220CA XV
IRM @ VRM
max
µA
V
5 58.1
5 58.1
5 85.5
5 85.5
5 128
5 128
5 171
5 171
5 188
5 188
VBR @ IR VCL @ IPP VCL @ IPP αT
C
min nom max
max
max
max typ
note2
10/1000µs 8/20µs note3 note4
V V V mA V A V A 10-4/°C (PF)
64.6 68 74.8 1 92 4.3 121 19 10.4 270
64.6 68 71.4 1 92 4.3 121 19 10.4 270
95.0 100 110 1 137 2.9 178 13 10.6 200
95.0 100 105 1 137 2.9 178 13 10.6 200
143 150 165 1 207 2.0 265 9 10.8 145
143 150 158 1 207 2.0 265 9 10.8 145
190 200 220 1 274 1.5 353 6.5 10.8 120
190 200 210 1 274 1.5 353 6.5 10.8 120
209 220 242 1 328 1.4 388 6 10.8 110
209 220 231 1 328 1.4 388 6 10.8 110
All parameters tested at 25 °C, except where indicated.
* = Marking
% I PP
100
10 s
PULSE WAVEFORM 10/1000 s
50
0
t
1000 s
Note 1 :
Note 2 :
Note 3 :
Note 4 :
For surges greater than the maximum values,
the diode will present a short-circuit Anode - Cathode.
Pulse test: TP < 50 ms.
∆VBR = αT * (Ta - 25) * VBR(25°C).
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
Figure 1: Power dissipation derating versus
ambient temperature
100 %
80 %
Peak Power
(on printed circuit).
60 %
40 %
Average Power
(on infinite heatsink).
20 %
0%
0
Tamb (˚c)
20 40 60 80 100 120 140 160 180 200
3/7
143
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