ATF-21186 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza

componentes Descripción

Fabricante

ATF-21186

0.5–6 GHz General Purpose Gallium Arsenide FET

HP => Agilent Technologies 

ATF-21186 Absolute Maximum Ratings

Symbol

Parameter

Units Absolute Maximum[1]

VDS

Drain-Source Voltage

V

VGS

Gate-Source Voltage

V

VGD

Gate-Drain Voltage

V

IDS

Drain Current

mA

PT

Power Dissipation[2,3]

mW

TCH

Channel Temperature

°C

TSTG Storage Temperature

°C

5

-4

-6

IDSS

400

150

-65 to +150

Thermal Resistance[2]: θjc = 225°C/W

Notes:

1. Operation of this device above any

one of these parameters may cause

permanent damage.

2. TCASE = 25oC (TCASE is defined to

be the temperature at the ends of

pins 2 and 4 where they contact the

circuit board).

3. Derate at 4.4 mW/oC for TC␣ >␣ 60 oC.

ATF-21186 Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

NFo

Optimum Noise Figure

VDS = 2 V, IDS = 15 mA

f = 1 GHz

f = 2 GHz

f = 4 GHz

GA

Associated Gain

VDS = 2 V, IDS = 15 mA

f = 1 GHz

f = 2 GHz

f = 4 GHz

P1 dB

Power at 1 dB Gain Compression

VDS = 3 V, IDS = 70 mA

f = 1 GHz

f = 2 GHz

f = 4 GHz

G1 dB

1 dB Compressed Gain

VDS = 3 V, IDS = 70 mA

f = 1 GHz

f = 2 GHz

f = 4 GHz

gm

Transconductance

VDS = 3 V, VGS = 0 V

IDSS

Saturated Drain Current

VDS = 3 V, VGS = 0 V

VP

Pinchoff Voltage

VDS = 3 V, IDS = 1 mA

Units

dB

dB

dBm

dB

mS

mA

V

Min.

12.0

70

80

-3.0

Typ.

0.4

0.5

0.6

14.2

12.6

9.1

19.0

19.0

18.0

18.0

14.0

8.5

120

120

-1.5

Max.

0.75

200

-0.8

5-50

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