ATF-21186-TR1 Ver la hoja de datos (PDF) - HP => Agilent Technologies
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ATF-21186-TR1 Datasheet PDF : 8 Pages
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0.5 – 6 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-21186
Features
• Low Noise Figure:
0.5 dB Typ. @ 2 GHz
• High Output Power:
19 dBm Typ. P1dB @ 2 GHz
• High MSG:
13.5 dB Typ. @ 2 GHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
30
20
MSG
10
S 21
MAG
0
0.1
1
10
FREQUENCY (GHz)
ATF-21186 Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 15 mA.
Description
Hewlett–Packard’s ATF-21186 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
general purpose device is
designed for use in low noise
amplifiers, gain stages, driver
amplifiers, and oscillators
operating over the VHF, UHF, and
microwave frequency ranges.
High gain with two volt operation
makes this part attractive for low
voltage, battery operated systems.
The low noise figure is
appropriate for commercial
systems demanding good
sensitivity, such as GPS receiver
front-ends and MMDS television
receivers. The output power is
sufficient for use as the driver
stage in many hand-held
transceivers operating in the
900␣ MHz through 2.4 GHz bands,
including in cellular phones, PCN,
and ISM band spread spectrum
applications.
85 mil Plastic Surface
Mount Package
Pin Configuration
4
SOURCE
GATE
1
DRAIN
3
2
SOURCE
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 750 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5-49
5965-8716E
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