SIM200D12SV3 Ver la hoja de datos (PDF) - SemiWell Semiconductor
Número de pieza
componentes Descripción
Fabricante
SIM200D12SV3 Datasheet PDF : 7 Pages
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Preliminary
SIM200D12SV3
VFM
Diode Forward Voltage Drop
-
1.65 2.15
V IC = 200A
Switching Characteristic @ Tj = 25℃ (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Cies
Input capacitance
- 17306 -
Coss Output capacitance
-
810
-
pF
Cres Reverse transfer capacitance
-
360
-
td(on) Turn-on delay time
-
300
-
tr
Rise time
td(off) Turn-off delay time
-
108
-
ns
-
660
-
tf
Fall time
-
156
-
Irr
Diode Peak Reverse Recovery current
-
160
-
A
trr
Diode Reverse Recovery time
-
250
-
ns
Test conditions
VCC = 30V, VGE = 0V
f = 1.0MHz
Tj = 125℃, VCC = 600V
IC = 200A, VGE = 15V
RG = 3.6Ω
Tj = 125℃, VCC = 600V
IF = 200A, VGE = 15V
RG = 3.6Ω, di/dt=1200A/us
Thermal Characteristic Values
Symbol
Parameters
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
RΘCS
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
-
-
0.10
-
-
0.20
℃/W
-
0.04
-
-2-
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