S-80715AN-DC-X Ver la hoja de datos (PDF) - Seiko Instruments Inc
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S-80715AN-DC-X Datasheet PDF : 42 Pages
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Electrical Characteristics
1. S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
VDET
ISS
VDD
IOUT
∆-VDET
∆Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.464 1.500 1.536
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.19
mV/°C
2. S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
VDET
ISS
VDD
IOUT
∆-VDET
∆Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.561 1.600 1.639
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.20
mV/°C
3. S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 3.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
1.659 1.700 1.741
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.21
mV/°C
Seiko Instruments Inc.
7
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