S-80716AN Ver la hoja de datos (PDF) - Seiko Instruments Inc
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S-80716AN Datasheet PDF : 42 Pages
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
10. S-80723AL/AL-AL-X, S-80723AN/AN-DL-X
S-80723SL-AL-X, S-80723SN-DL-X (Detection voltage : 2.244 to 2.356 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.244 2.300 2.356
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.29 mV/°C
11. S-80724AL/AL-AM-X, S-80724AN/AN-DM-X, S-80724SN-DM-X (Detection voltage : 2.342 to 2.458 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.342 2.400 2.458
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.30 mV/°C
12. S-80725AL/AL-AN-X, S-80725AN/AN-DN-X
S-80725SL-AN-X, S-80725SN-DN-X (Detection voltage : 2.440 to 2.560 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.440 2.500 2.560
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.31 mV/°C
10
Seiko Instruments Inc.
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