RTF015P02 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RTF015P02 Datasheet PDF : 5 Pages
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Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
1000
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
100
Ta=25°C
Pulsed
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
RTF015P02
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4.5V
Pulsed
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −2.5V
Pulsed
10
Ta=125°C
Ta=75°C
1 Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
tf
100 td (off)
Ta=25°C
VDD= −15V
VGS= −4.5A
RG=10Ω
Pulsed
td (on)
10
tr
1
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7
VDD= −15V
ID= −1.5A
6
RG=10Ω
Pulsed
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
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