RTF015P02 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RTF015P02 Datasheet PDF : 5 Pages
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Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Drain current
Continuous
ID
±1.5
A
Pulsed
IDP ∗1
±6
A
Source current
Continuous
IS ∗1
−0.6
A
(Body diode)
Pulsed
ISP
−6
A
Total power dissipation
PD ∗2
0.8
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
∗
RDS (on)
−
−
100 135 mΩ ID= −1.5A, VGS= −4.5V
110 150 mΩ ID= −1.5A, VGS= −4V
180 250 mΩ ID= −1.5A, VGS= −2.5V
Forward transfer admittance
Yfs ∗ 1.5
−
−
S VDS= −10V, ID= −0.8A
Input capacitance
Ciss
− 560 −
pF VDS= −10V
Output capacitance
Coss
−
90
−
pF VGS=0V
Reverse transfer capacitance Crss
− 55 − pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ∗
−
12
−
ns ID= −0.8A
tr ∗ −
12
−
ns VDD −15V
td (off) ∗
−
38
−
VGS= −4.5V
ns RL=9Ω
tf ∗ −
12
−
ns RGS=10Ω
Total gate charge
Qg
−
5.2
−
nC VDD −15V RL 10Ω
Gate-source charge
Qgs
−
1.3
−
nC VGS= −4.5V RGS=10Ω
Gate-drain charge
Qgd
− 1.4 − nC ID= −1.5A
∗Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD −
− −1.2 V IS= −0.6A, VGS=0V
RTF015P02
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