RPR-220UC30N Ver la hoja de datos (PDF) - ROHM Semiconductor
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RPR-220UC30N Datasheet PDF : 5 Pages
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RPR-220UC30N
Electrical and optical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input
characteristics
Forward voltage
Reverse current
VF IF =30mA
IR VR =9V
Datasheet
Values
Unit
Min. Typ. Max.
- 2.0 2.6 V
-
- 100 A
Output
characteristics
Dark current
Peak sensitivity
wavelength
ICEO VCE=10V
p
-
-
- 10 A
- 800 -
nm
Collector current
Transfer
characteristics
Collector-emitter
saturation
voltage
Response time
IC VCE =5V, IF=10mA * 0.08 - 0.8 mA
VCE(sat) IF =20mA, IC=0.1mA *
-
0.1 0.3
V
tr·tf
VCC =10V, IF=20mA,
RL=100*
- 10 -
s
Infrared light
emitter diode
Cut-off frequency
Peak light emitting
wavelength
fC
IF =50mA
* Non-coherent Infrared
p
light emitting diode used.
-
1
- MHz
- 630 -
nm
Photo
transistor
Response time
Maximum
sensitivity
wavelength
tr·tf
VCC =5V, IC=1mA, RL=100
*This product is not designed to be
-
10
-
protected against electromagnetic wave.
p
-
- 800 -
s
nm
* Reflector object : Standard white paper. (Reflection ratio = 90%)
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© 2015 ROHM Co., Ltd. All rights reserved.
2/4
2017.03 - Rev.B
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