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RMLA3565-58 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
RMLA3565-58
ETC
Unspecified ETC
RMLA3565-58 Datasheet PDF : 5 Pages
1 2 3 4 5
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Application
Information
PRELIMINARY INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a
surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for
3.5 to 6.5 GHz applications. Figure 1 shows the functional block diagram of the packaged product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic
showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board
corresponding to the schematic diagram. A typical performance obtained from the test fixture is shown in figure
5. The following should be noted:
(1) Package pin designations are as shown in figure 2.
(2) Vd is the Drain Voltage (positive) applied at the pins of the package
(3) Vdd is the positive supply voltage at the evaluation board terminal
Figure 1
Functional Block
Diagram
Ground
Pin# 5
Ground
Pin# 1,3,4,6,9,10,11,13
Ground
Pin# 7
RF IN
Pin# 8
RF OUT
Pin# 2
Figure 2
Outline
Dimensions
Dimensions in inches
TOP VIEW
0.200 SQ.
654
Vd
Pin# 12
BOTTOM VIEW
4 56
www.raytheon.com/micro
7
3
3
7
8
0.030
2
0.015 2
1
1
8
9
9
10 1112
PLASTIC LID
12 11 10
0.041
0.010
0.230
0.246
0.282
0.069 MAX.
SIDE SECTION
Characteristic performance data and specifications are subject to change without notice.
Revised September 24, 2001
Page 2
Pin# Description
1
GND
2
RF Out
3
GND
4
GND
5
GND
6
GND
7
GND
8
RF In
9
GND
10
GND
11
GND
12
Vd
13
GND
(Package Base)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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