RMBA09501 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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RMBA09501

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

Fairchild Semiconductor 

Electrical Characteristics2

Parameter

Frequency Range

Gain (Small Signal)

Gain Variation:

Over Frequency Range

Over Temperature Range

Noise Figure

Linear Output Power: for CDMA3

OIP35

Idd @ 33dBm Pout – 7V

PAE @ 33dBm Pout

Input VSWR (50Ω)

RF Input Power

Drain Voltage (VDD)

Gate Voltages (VG1, VG2)4

Quiescent Currents (IDQ1, IDQ2)4

Thermal Resistance (Channel to Case) Rjc

Min

Typ

Max

869

894

35

±1.5

±2.5

6

33

43

1.0

28.5

2:1

+1

7.0

-2

-0.25

150, 400

11

Units

MHz

dB

dB

dB

dB

dBm

dBm

A

%

dBm

V

V

mA

°C/W

Notes:

2. VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 50Ω.

3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel

at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.

4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with

nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to

optimize the linearity of the amplifier for other modulation systems.

5. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter.

The device requires external input and output matching to 50Ω as shown in Figure 3 and the Parts List.

©2004 Fairchild Semiconductor Corporation

RMBA09501 Rev. C

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