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RF1005TF6S Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
RF1005TF6S
ROHM
ROHM Semiconductor ROHM
RF1005TF6S Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RF1005TF6S
 
Electrical characteristics curves
Data Sheet
100
Tj=125C
Tj=150C
10
Tj=25C
1
Tj=75C
100000
10000
1000
100
10
Tj=150C Tj=125C
Tj=75C
Tj=25C
0.1
0
500 1000 1500 2000 2500 3000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1
0 50 100 150 200 250 300 350
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1400
1300
1200
100
T=25C
IF=10A
n=20pcs
10
AVE : 1268mV
T=25C
VR=600V
n=20pcs
AVE : 40.6nA
1100
1
VF DISPERSION MAP
IR DISPERSION MAP
250
200
150
100
50
0
1000
100
10
1
AVE : 192A
IFSM
1cyc
8.3ms
IFSM DISRESION MAP
IFSM
time
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
40
35
T=25C
IF=0.5A
30
IR=1A
Irr=0.25×IR
25
n=10pcs
20
AVE : 29.0ns
15
10
5
0
trr DISPERSION MAP
30
no break at 30kV
25
20
15
AVE 20.7kV
10
5
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
1000
100
f=1MHz
Tj=25C
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
300
Ta=25
f=1MHz
280
VR=0V
n=10pcs
260
AVE : 270.6pF
240
220
200
Ct DISPERSION MAP
1000
100
10
1
1
10
IFSM
8.3ms 8.3ms
1cyc.
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Rth(j-c)
1
0.1
0.001 0.01 0.1
1
10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.A

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