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Número de pieza
componentes Descripción
RF1005TF6S Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RF1005TF6S
Super Fast Recovery Diode
ROHM Semiconductor
RF1005TF6S Datasheet PDF : 7 Pages
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5
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7
RF1005TF6S
Electrical characteristics curves
Data Sheet
100
Tj=125
C
Tj=150
C
10
Tj=25
C
1
Tj=75
C
100000
10000
1000
100
10
Tj=150
C Tj=125
C
Tj=75
C
Tj=25
C
0.1
0
500 1000 1500 2000 2500 3000
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0 50 100 150 200 250 300 350
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
1400
1300
1200
100
T
j
=25
C
I
F
=10A
n=20pcs
10
AVE : 1268mV
T
j
=25
C
V
R
=600V
n=20pcs
AVE : 40.6nA
1100
1
V
F
DISPERSION MAP
I
R
DISPERSION MAP
250
200
150
100
50
0
1000
100
10
1
AVE : 192A
I
FSM
1cyc
8.3ms
I
FSM
DISRESION MAP
I
FSM
time
10
100
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
40
35
T
j
=25
C
I
F
=0.5A
30
I
R
=1A
Irr=0.25×I
R
25
n=10pcs
20
AVE : 29.0ns
15
10
5
0
trr DISPERSION MAP
30
no break at 30kV
25
20
15
AVE
:
20.7kV
10
5
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
1000
100
f=1MHz
Tj=25
C
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
300
Ta=25
℃
f=1MHz
280
V
R
=0V
n=10pcs
260
AVE : 270.6pF
240
220
200
Ct DISPERSION MAP
1000
100
10
1
1
10
I
FSM
8.3ms 8.3ms
1cyc.
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
Rth(j-c)
1
0.1
0.001 0.01 0.1
1
10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
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2/3
2011.05 - Rev.A
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