RD30HVF1 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
RD30HVF1 Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1100
S11
(mag) (ang)
0.867 -172.4
0.879 -176.3
0.885 -177.5
0.888 -179.1
0.905 178.5
0.915 176.2
0.926 174.1
0.933 171.8
0.936 169.5
0.945 167.6
0.950 165.6
0.951 163.6
0.954 161.7
0.957 159.9
0.962 158.2
0.963 156.5
0.963 154.8
0.963 153.2
0.962 151.6
0.964 150.1
0.966 146.9
S21
(mag) (ang)
8.747 72.7
5.523 61.2
4.571 56.4
3.852 52.4
2.877 44.1
2.202 37.1
1.754 31.4
1.422 25.8
1.167 20.9
0.985 17.2
0.842 13.3
0.725
9.8
0.635
7.2
0.559
3.7
0.495
1.3
0.449 -0.5
0.407 -3.8
0.366 -5.2
0.337 -6.6
0.315 -9.9
0.275 -12.1
S12
(mag) (ang)
0.015 -11.6
0.014 -18.8
0.013 -22.2
0.012 -24.2
0.010 -26.2
0.009 -27.0
0.007 -24.4
0.006 -18.5
0.005 -8.2
0.004
8.0
0.005 21.6
0.005 35.6
0.005 45.7
0.007 53.5
0.007 58.4
0.008 61.6
0.009 60.7
0.011 61.5
0.011 63.1
0.013 65.6
0.015 62.3
S22
(mag) (ang)
0.687 -166.3
0.723 -168.8
0.740 -169.6
0.760 -170.5
0.806 -172.5
0.825 -174.8
0.853 -177.1
0.879 -179.4
0.887 178.4
0.902 176.1
0.914 174.1
0.918 172.2
0.928 170.2
0.933 168.4
0.936 166.6
0.943 164.8
0.947 163.3
0.947 161.7
0.953 159.9
0.955 158.7
0.958 155.5
RD30HVF1
MITSUBISHI ELECTRIC
7/8
10 Jan 2006
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