RD30HVF1 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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RD30HVF1 Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance,
DRAIN DISSIPATION VS.
100 AMBIENT TEMPERATURE
80
Silicon MOSFET Power Transistor,175MHz,30W
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
60
6
40
4
20
2
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
012345
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
Vgs=5.5V
Vgs=5V
6
Vgs=4.5V
4
Vgs=4V
Vgs=3.5V
2
Vgs=3V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
200
180
160
Ta=+25°C
f=1MHz
140
120
100
80
60
40
20
0
0
5
10 15 20
Vds(V)
Vds VS. Coss CHARACTERISTICS
140
120
Ta=+25°C
f=1MHz
100
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
16
12
8
4
0
0
5
10
15
20
Vds(V)
TYPICAL CHARACTERISTICS
RD30HVF1
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
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