RB225NS-40(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

RB225NS-40
(Rev.:2011)

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB225NS-40

lApplications

General rectification

lDimensions (Unit : mm)

lFeatures

1)Cathode common dual type.(LPDS)

2)Low IR

RB225

NS40

①

Data Sheet

lLand size figure (Unit : mm)

lConstruction

Silicon epitaxial planer

ROHM : LPDS

JEITA : TO263S

① Manufacture Year, Week and Day

lTaping dimensions (Unit : mm)

lStructure

①②③

lAbsolute maximum ratings (Tc=25C)

Parameter

Symbol

Limits

Reverse voltage (repetitive)

VRM

40

Reverse voltage (DC)

VR

40

Average rectified forward current (*1)

Io

30

Forward current surge peak (60Hz・1cyc) (*1)

Junction temperature

IFSM

Tj

100

150

Storage temperature

Tstg

-40 to +150

(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode

lElectrical characteristics (Tj=25C)

Parameter

Symbol Min.

Forward voltage

Reverse current

VF

-

IR

-

Thermal resistance

Rth (J-C) -

Typ.

0.53

0.08

-

Max.

0.63

0.5

2.00

Unit

V

V

A

A

C

C

Unit

V

mA

°C/W

Conditions

IF=15A

VR=40V

junction to case

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© 2011 ROHM Co., Ltd. All rights reserved.

1/4

2011.10 - Rev.A

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