R6012FNX Ver la hoja de datos (PDF) - ROHM Semiconductor
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R6012FNX Datasheet PDF : 14 Pages
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R6012FNX
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Transconductance
gfs *6 VDS = 10V, ID = 6.0A
3.5
8
-
S
Input capacitance
Output capacitance
r Reverse transfer capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = 25V
f = 1MHz
-
1300
-
-
890
-
pF
-
45
-
o Effective output capacitance,
f energy related
d Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 480V
-
56.7
-
pF
-
57.3
-
e Turn - on delay time
d Rise time
n s Turn - off delay time
e n Fall time
td(on) *6 VDD ⋍ 300V, VGS = 10V
-
tr *6
ID = 6A
-
td(off) *6 RL = 50W
-
tf *6
RG = 10W
-
30
-
37
-
ns
77
154
20
40
m sig lGate Charge characteristics(Ta = 25°C)
m e Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
o D Total gate charge
c Gate - Source charge
e w Gate - Drain charge
R e Gate plateau voltage
Qg *6 VDD ⋍ 300V
-
35
-
Qgs *6
ID = 12A
-
10
-
nC
Qgd *6 VGS = 10V
-
15
-
V(plateau) VDD ⋍ 300V, ID = 12A
-
6.6
-
V
ot N *1 Limited only by maximum temperature allowed.
N*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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3/13
2013.04 - Rev.B
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