R6012FNX Ver la hoja de datos (PDF) - ROHM Semiconductor

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Fabricante

R6012FNX

Nch 600V 12A Power MOSFET

ROHM Semiconductor 

R6012FNX

Nch 600V 12A Power MOSFET

Datasheet

lOutline

VDSS

RDS(on) (Max.)

600V

0.51W

TO-220FM

ID

12A

PD

50W

lFeatures

1) Fast reverse recovery time (trr).

lInner circuit

(1) (2) (3)

for

2) Low on-resistance.

3) Fast switching speed.

(1) Gate

(2) Drain

(3) Source

d 4) Gate-source voltage (VGSS) guaranteed to be 30V.

e 5) Drive circuits can be simple.

*1 Body Diode

d 6) Parallel use is easy.

n s 7) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Packaging

Bulk

e n Reel size (mm)

-

m ig lApplication

s Switching Power Supply

Tape width (mm)

-

Type

Basic ordering unit (pcs)

500

Taping code

-

m eMarking

R6012FNX

o D lAbsolute maximum ratings(Ta = 25°C)

c Parameter

Symbol

Value

Unit

e Drain - Source voltage

VDSS

600

V

w Tc = 25°C

ID *1

12

A

R Continuous drain current

eTc = 100°C

ID *1

6

A

t N Pulsed drain current

ID,pulse *2

48

A

o Gate - Source voltage

VGSS

30

V

NAvalanche energy, single pulse

EAS *3

9.6

mJ

Avalanche energy, repetitive

EAR *4

3.5

mJ

Avalanche current

IAR *3

6

A

Power dissipation (Tc = 25°C)

PD

50

W

Junction temperature

Tj

150

°C

Range of storage temperature

Tstg

-55 to +150

°C

Reverse diode dv/dt

dv/dt *5

15

V/ns

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© 2013 ROHM Co., Ltd. All rights reserved.

1/13

2013.04 - Rev.B

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