ATF-10736 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-10736 Datasheet PDF : 4 Pages
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ATF-10736 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 350°C/W; TCH = 150°C
1µm Spot Size[5]
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10736-TR1
1000
7"
ATF-10736-STR
10
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE > 25°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-10736 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
1.0
0.8
0.88
41
0.52
2.0
0.9
0.75
85
0.27
4.0
1.2
0.48
159
0.08
6.0
1.4
0.46
-122
0.08
8.0
1.7
0.53
-71
0.43
ATF-10736 Typical Performance, TA = 25°C
18
30
GA
2.0
15
25
12
20
MSG
1.5
1.0
NFO
0.5
9
15
6
10
5
|S21|2
MAG
0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
0
0.5
1.0 2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
30
25
MSG
20
15
|S21|2
MAG
MSG
10
5
0
0.5
1.0 2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
5-30
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