ATF-25170 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-25170 Datasheet PDF : 3 Pages
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ATF-25170 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 300°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 3.3 mW/°C for
TMOUNTING SURFACE >40°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
1.0
0.6
.89
24
.78
2.0
0.7
.77
50
.53
4.0
0.8
.63
105
.33
6.0
1.0
.66
147
.06
8.0
1.2
.62
-159
.11
ATF-25170 Typical Performance, TA = 25°C
25
18
20
MSG
15
10
|S21|2
5
2.0
MAG
1.5
1.0
0.5
15
GA
12
9
6
NFO
0
0.5 1.0 2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA.
16
14
GA
12
10
1.5
NFO
1.0
0.5
0
0 10 20 30 40 50 60
IDS (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
5-58
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