ATF-25570 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-25570 Datasheet PDF : 3 Pages
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ATF-25570 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 300°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for
TCASE > 40°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-25570 Typical Performance, TA = 25°C
25
25
20
MSG
MSG
20
15
10
|S21|2
5
15
MAG
10
5
|S21|2
MAG
0
0.5 1.0 2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
0
0.5 1.0
2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
5-61
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