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PBHV8115T Datasheet PDF : 11 Pages
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NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
1
VCEsat
(V)
10−1
10−2
006aab162
(1)
(2)
(3)
10
VCEsat
(V)
1
10−1
(1)
(2)
(3)
10−2
006aab163
10−3
10−1
1
10
102
103
104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab164
10−3
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab165
10
1
(1)
(2)
10−1
10−1
1
(3)
10
102
103
104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
(2)
1
(3)
10−1
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV8115T_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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