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PBHV8115T Datasheet PDF : 11 Pages
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NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
500
hFE
400
(1)
300
(2)
200
(3)
100
006aab158
0
10−1
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
0.8
0.4
006aab160
(1)
(2)
(3)
2.0
IC
(A)
1.6
1.2
IB (mA) = 300
270
240
210
180
150
120
90
60
0.8
30
0.4
006aab159
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1.3
VBEsat
(V)
0.9
0.5
006aab161
(1)
(2)
(3)
0
10−1
1
10
102
103
104
IC (mA)
0.1
10−1
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV8115T_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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