DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SAB88C166W-5M Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
SAB88C166W-5M Datasheet PDF : 58 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
SAB 88C166(W)
FCR (FFA0H / D0H)
15 14 13 12 11 10
FWM
SET -
-
-
-
-
rw rw rw rw rw rw
SFR
98
BE
7
WDW
W
65
CKCTL
rw
rw
rw
Reset Value: 00X0H*)
43210
VPP FC FBUSY
REV VPP RPROT FEE FWE
r rw r/w rw rw
Bit
FWE
FEE
FBUSY
Function
Flash Write Enable Bit (see description below)
0 : Flash write operations (program / erase) disabled
1 : Flash write operations (program / erase) enabled
Flash Erase Enable Bit (Significant only, when FWE = ’1’, see description below)
0 : Flash programming mode selected
1 : Flash erase mode selected
Flash Busy Bit (On read accesses)
0 : No Flash write operation in progress
1 : Flash write operation in progress
RPROT
FCVPP
VPPREV
CKCTL
WDWW
BE
FWMSET
Flash Read Protection Activation Bit (On write accesses)
0 : Deactivates Flash read protection
1 : Activates Flash read protection, if this is enabled
Flash Control VPP Bit
0 : No VPP failure occurred during a Flash write operation
1 : VPP failure occurred during a Flash write operation
Flash VPP Revelation Bit
0 : No valid VPP applied to pin VPP
1 : VPP applied to pin VPP is valid
Internal Flash Timer Clock Control
Determines the width of an internal Flash write or erase pulse
Word / Double Word Writing Bit (significant only in programming mode)
0 : 16-bit programming operation
1 : 32-bit programming operation
Bank Erase Select (significant only in erasing mode)
Selects the Flash Bank to be erased
Flash Writing Mode Set Bit (see description below)
0 : Exit Flash writing mode, return to standard mode
1 : Stay in Flash writing mode
*) The reset value of bit VPPREV depends on the voltage on pin VPP.
Note: The FCR is no real register but is rather virtually mapped into the active address space of the
Flash memory while the Flash writing mode is active. In writing mode all direct (mem)
accesses refer to the FCR, while all indirect ([Rwn]) accesses refer to the Flash memory
array itself.
Semiconductor Group
10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]