P2804BVG Ver la hoja de datos (PDF) - Niko Semiconductor

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Fabricante

P2804BVG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P2804BVG

SOP-8

Lead-Free

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0V, VDS = 10V, f = 1MHz

VDS = 0.5V(BR)DSS, VGS = 10V,

ID = 7.5A

VDS = 20V,

ID ≅ 1A, VGS = 10V, RGEN = 6Ω

790

175

pF

65

16

2.5

nC

2.1

2.2 4.4

7.5 15

nS

11.8 21.3

3.7 7.4

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current3

Forward Voltage1

IS

ISM

VSD

IS = IS, VGS = 0V

1.3

A

2.6

1V

Reverse Recovery Time

trr

IF = 5 A, dlF/dt = 100A / µS

15.5

nS

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

7.9

nC

REMARK: THE PRODUCT MARKED WITH “P2804BVG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

2

SEP-30-2004

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