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P2804BVG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P2804BVG

SOP-8

Lead-Free

D

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

G

40V

28mΩ

7.5A

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise

PARAMETERS/TEST CONDITIONS

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current1

TC = 25 °C

TC = 100 °C

Power Dissipation

TC = 25 °C

TC = 100 °C

Operating Junction & Storage Temperature Range

Lead Temperature (1/16” from case for 10 sec.)

VDS

VGS

ID

IDM

PD

Tj, Tstg

TL

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Junction-to-Ambient

RθJA

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1％

TYPICAL

4 :GATE

5,6,7,8 :DRAIN

1,2,3 :SOURCE

Noted)

LIMITS

40

±20

7.5

6.5

20

2.5

1.3

-55 to 150

275

UNITS

V

V

A

W

°C

MAXIMUM

50

UNITS

°C / W

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current1

Drain-Source On-State

Resistance1

Forward Transconductance1

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(ON)

RDS(ON)

gfs

STATIC

VGS = 0V, ID = 250µA

VDS = VGS, ID = 250µA

VDS = 0V, VGS = ±20V

VDS = 32V, VGS = 0V

VDS = 30V, VGS = 0V, TC = 125 °C

VDS = 10V, VGS = 10V

VGS = 4.5V, ID = 6.5A

VGS = 10V, ID = 7.5A

VDS = 10V, ID = 7.5A

LIMITS

UNIT

MIN TYP MAX

40

V

1 1.5 2.5

±250 nA

1

µA

10

20

A

30 42

mΩ

21 28

19

S

1

SEP-30-2004

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