P2103NVG Ver la hoja de datos (PDF) - Niko Semiconductor

Número de pieza

componentes Descripción

Fabricante

P2103NVG

N- & P-Channel Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N- & P-Channel Enhancement Mode

P2103NVG

Field Effect Transistor

SOP-8

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V(BR)DSS RDS(ON)

ID

N-Channel 30 21mΩ 8A

P-Channel -30 34mΩ -6A

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current1

Avalanche Current

Avalanche Energy

Power Dissipation

Junction & Storage Temperature Range

TA = 25 °C

TA = 70 °C

L = 0.1mH

TA = 25 °C

TA = 70 °C

VDS

VGS

ID

IDM

IAS

EAS

PD

Tj, Tstg

N-Channel P-Channel UNITS

30

-30

V

±20

±20

V

8

-6

6

-5

A

36

-27

26

-27

35

38

mJ

2

W

1.3

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Junction-to-Ambient

RθJA

1Pulse width limited by maximum junction temperature.

TYPICAL

MAXIMUM

62.5

UNITS

°C / W

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Breakdown Voltage

V(BR)DSS

Gate Threshold Voltage

VGS(th)

STATIC

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

LIMITS

UNIT

MIN TYP MAX

N-Ch 30

P-Ch -30

V

N-Ch 1 1.7 2.5

P-Ch -1 -1.6 -2.5

REV 1.0

1

Oct-06-2010

Share Link: