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NX25P10 Ver la hoja de datos (PDF) - Unspecified

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NX25P10 Datasheet PDF : 28 Pages
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1M / 2M / 4M-BIT SERIAL FLASH MEMORY with 40MHz SPI
NX25P10, NX25P20 AND NX25P40
SPECIFICATIONS AND TIMING DIAGRAMS
Table 5. Absolute Maximum Ratings (1)
Symbol
Parameters
Conditions
Range
Unit
Vcc
VIO
TSTG
TLEAD
Supply Voltage
Voltage Applied to Any Pin
Storage Temperature
Lead Temperature
Relative to Ground
–0.6 to +4.0
V
–0.6 to Vcc + 0.4
V
–65 to +150
°C
See Note 2
°C
VESD
Electrostatic Discharge Voltage
Human Body Model(3)
–2000 to +2000
V
Note:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is
not guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive
on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
Table 6. Operating Ranges
Symbol
Parameter
Conditions
Min
Vcc
Supply Voltage(1)
FR = 33MHz, fR = 20MHz
2.7
FR = 40MHz, fR = 33MHz
3.0
TA
Ambient Temperature, Operating
Industrial
–40
Max
Unit
3.6
V
3.6
V
+85
°C
Note:
1. Vcc voltage during Read can operate across the min and max range but should not exceed ±10% of the programming
(erase/write) voltage.
Table 7. Power-up Timing and Write Inhibit Threshold
Symbol
tVSL(1)
tPUW(1)
VWI(1)
Parameter
VCC(min) to CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Note:
1. These parameters are characterized only.
Min
Max
Unit
10
µs
1
10
ms
1
2
V
Vcc
Vcc (max)
Vcc (min)
VWI
Program, Erase and Write Instructions are Ignored
CS Must Track Vcc
Reset
State
tVSL
Read Instructions
Allowed
tPUW
Device is Fully
Accessible
Time
Figure 17. Power-up Timing and Voltage Levels
22
NexFlash Technologies, Inc.
PRELIMINARY MKP-0009 Rev 6 NXSF040I-0405
04/04/05 ©

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