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NIS6111QPT1 Datasheet PDF : 8 Pages
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NIS6111
ELECTRICAL CHARACTERISTICS (TJ = 25°C, Reg In = 8.0 V, unless otherwise noted.)
Characteristic
Symbol
SYNCHRONOUS RECTIFIER
ON STATE
Conduction Mode ON Resistance
(I = 55 Adc, VGS = 4.5 V)
RON
(I = 20 Adc, VGS = 4.5 V)
OFF STATE
Reverse Leakage Current (VR = 28 VDC)
IDSS
Reverse Leakage Current (VR = 28 VDC, TJ = 150°C)
IDSS
SWITCHING (See Figures 2 and 4) (Note 2)
FET Turn−on Time (Imax = 3.0 A, I rev = 1.0 A, Vrev = 5.0 V)
tsat
Reverse Recovery Time (Imax = 3.0 A, I rev = 1.0 A, Vrev = 5.0 V)
trev
BODY DIODE
Forward On−Voltage (Notes 1 and 3)
I = 20 Adc, VGS = 0 V
VSD
I = 55 Adc, VGS = 0 V
Reverse Recovery Time (IS = 30 Adc, di/dt = 100 A/ms)
trr
ta
tb
POWER SUPPLY (VR = 20 V, TJ = 255C)
Supply Voltage (Pin 2 to Pin 1), Internal Bias Voltage
VCC
Cap Charge Time
(Zero Initial Charge, 5.0 V @ Reg In, to UVLO Threshold, C = 0.22 mF)
tchg
TJ = −20°C to 125°C
tchg
Headroom (for Vcap = 4.7 V)
Vhd
Minimum Duty Cycle for Operation (Freq = 100 kHz)
dmin
Charge Current
−
Delay Time (Tamb = 20°C)
Td
Reg In Voltage (Pin 5 to Pin 1)
Minimum Voltage Required for Operation (VSD + Vhd)
Minimum Voltage Required for Fall Gate Drive (VCC + Vhd)
CONTROL CIRCUIT
Bias Supply Current (fsw = 100 kHz)
Input Offset Voltage
Shutdown Voltage (UVLO)
1. Pulse width v 300 ms, duty cycle v 2%.
2. Pulse width 2.0 ms, duty cycle t5%.
3. Switching characteristics are independent of operating junction temperature.
4. Based on 0.062″ FR4 board, double−sided 1 oz copper.
IBIAS
IOS
VSD
Min
Typ Max Unit
−
4.9
−
mW
−
4.7
−
−
−
1.5
mA
−
−
10
mA
−
45
−
ns
−
35
−
ns
−
0.82 1.2 Vdc
−
0.99
−
−
36.5
−
ns
−
17.7
−
−
18.8
−
4.7
4.9
5.1
V
−
2.7
−
ms
−
3.3
−
ms
−
1.0
−
V
−
2.0
−
%
250
300
−
mA
51
ns
4.65
V
5.9
−
2.0
4.0
mA
−
2.0
5.0
mV
−
3.65
−
V
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