NIS6111QPT1 Ver la hoja de datos (PDF) - ON Semiconductor

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NIS6111QPT1

Better Efficiency Rectifier System

ON Semiconductor 

NIS6111

MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted.)

Rating

Peak Repetitive Reverse Voltage (VK to VA)

Peak Regulator Input (Reg In) Voltage

Average Rectified Forward Current

Non−repetitive Peak Surge Current

Analog Die Thermal Resistance (Min Copper Area)

MOSFET Die Thermal Resistance (Min Copper Area)

Analog Die Thermal Resistance (Junction−to−Top of Board)

MOSFET Die Thermal Resistance (Junction−to−Top of Board)

Analog Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)

MOSFET Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)

Storage Temperature Range

Operating Temperature Range

Symbol

VRRM

Vregmax

IFAV

IFSM

qA j−a

qM j−a

qA j−t

qM j−t

qA j−b

qM j−b

Tstg

TJ

Value

24

28

30

90

83

78

4.9

0.6

30

7.0

−55 to 150

−20 to 125

Unit

V

V

A

A

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

°C

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values

(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage

may occur and reliability may be affected.

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