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MX28F1000P Ver la hoja de datos (PDF) - Unspecified

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MX28F1000P Datasheet PDF : 33 Pages
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MX28F1000P
voltages are internally generated in the same manner
as when the standard erase verify command is used.
The Automatic set-up block erase command is a com-
mand only operation that stages the device for auto-
matic electrical erasure of selected blocks in the array.
Automatic set-up block erase is performed by writing
20H to the command register.
To enter automatic block erase, the user must write
the command D0H to the command register. Block
addresses are loaded into internal register on the 2nd
falling edge of WE. Each successive block load cycles,
started by the falling edge of WE, must begin within
30ms from the rising edge of the preceding WE.
Otherwise, the loading period ends and internal auto
block erase cycle starts. When the data on DQ7 is "1"
and the data on DQ6 stops toggling for two
consecutive read cycles, at which time auto erase
ends and the device returns to the Read mode.
Refer to page 2 for detailed block address.
SET-UP AUTOMATIC PROGRAM/PROGRAM
COMMANDS
The Automatic Set-up Program is a command-only
operation that stages the device for automatic pro-
gramming. Automatic Set-up Program is performed by
writing 40H to the command register.
Once the Automatic Set-up Program operation is per-
formed, the next WE pulse causes a transition to an
active programming operation. Addresses are
internally latched on the falling edge of the WE pulse.
Data is internally latched on the rising edge of the WE
pulse. The rising edge of WE also begins the
programming operation. The system is not required to
provide further controls or timings. The device will
automatically provide an adequate internally
generated program pulse and verify margin. The
automatic programming operation is completed when
the data read on DQ6 stops toggling for two
consecutive read cycles and the data on DQ7 and
DQ6 are equivalent to data written to these two bits, at
which time the device returns to the Read mode (no
program verify command is required).
SET-UP CHIP ERASE/ERASE COMMANDS
Set-up Chip Erase is a command-only operation that
stages the device for electrical erasure of all bytes in
the array. The set-up erase operation is performed by
writing 20H to the command register.
To commence chip erasure, the erase command (20H)
must again be written to the register. The erase
operation begins with the rising edge of the WE pulse.
This two-step sequence of set-up followed by execu-
tion ensures that memory contents are not accidentally
erased. Also, chip-erasure can only occur when high
voltage is applied to the VPP pin. In the absence of this
high voltage, memory contents are protected against
erasure.
SET-UP BLOCK ERASE/ERASE COMMANDS
Set-up Block Erase is a command-only operation that
stages the device for electrical erasure of all selected
block(s) in the array. The set-up erase operation is
performed by writing 60H to the command register.
To enter block-erasure, the block erase command 60H
must be written again to the command register. The
block erase mode allows 1 to 8 blocks of the array to be
erased in one internal erase cycle. Internally, there are
8 registers (flags) addressed by A14 to A16. First block
address is loaded into internal registers on the 2-nd
falling of WE. Each successive block load cycles,
started by the falling edge of WE, must begin within
30ms from the rising edge of the preceding WE. Other-
wise, the loading period ends and internal block erase
cycle starts. When the data on DQ7 is "1" at which time
auto erase ends and the device returns to the Read
mode.
ERASE-VERIFY COMMAND
After each erase operation, all bytes must be verified.
The erase verify operation is initiated by writing A0H
into the command register. The address for the byte to
be verified must be supplied as it is latched on the
falling edge of the WE pulse.
P/N: PM0340
REV. 1.6, JAN. 19, 1999
9

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