MW7IC18100GNR1 Ver la hoja de datos (PDF) - Freescale Semiconductor

Número de pieza

componentes Descripción

Fabricante

MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

Zo = 75 Ω

f = 1920 MHz

Zload

f = 1760 MHz

f = 1760 MHz

Zin

f = 1920 MHz

VDD1 = VDD2 = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 W CW

f

Zin

MHz

W

Zload

W

1760

71.78 + j40.05

2.983 - j3.974

1780

79.83 + j31.13

2.872 - j3.861

1800

84.35 + j19.44

2.757 - j3.745

1820

84.75 + j7.234

2.636 - j3.639

1840

81.21 - j4.076

2.535 - j3.506

1860

74.76 - j12.32

2.434 - j3.376

1880

67.49 - j17.89

2.324 - j3.239

1900

60.03 - j20.86

2.234 - j3.105

1920

53.65 - j21.94

2.135 - j2.965

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 46. Series Equivalent Input and Load Impedance — 1800 MHz

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

20

RF Device Data

Freescale Semiconductor

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