MW7IC18100GNR1 Ver la hoja de datos (PDF) - Freescale Semiconductor

Número de pieza

componentes Descripción

Fabricante

MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 1800 MHz

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TC = −30_C

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25_C

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VDD = 28 Vdc, Pout = 40 W Avg.

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IDQ1 = 180 mA, IDQ2 = 1000 mA

85_C

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1760 1780 1800 1820 1840 1860 1880 1900 1920 1940

f, FREQUENCY (MHz)

Figure 45. Power Gain versus Frequency

RF Device Data

Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

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