MUN52XXDW1T1 Ver la hoja de datos (PDF) - ON Semiconductor
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MUN52XXDW1T1 Datasheet PDF : 20 Pages
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1
10
1000
IC/IB = 10
1
TA = −25°C
25°C
100
0.1
75°C
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20
40
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
50
10 1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
100
25°C
75°C
10
TA = −25°C
1
0.1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.01
0.001
50
0
VO = 5 V
2
4
6
8
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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