MUN52XXDW1T1 Ver la hoja de datos (PDF) - ON Semiconductor
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MUN52XXDW1T1 Datasheet PDF : 20 Pages
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1
1
IC/IB = 10
0.1
75°C
1000
TA = −25°C
100
75°C
25°C
−25°C
25°C
0.01
10
VCE = 10 V
0.001
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
1
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 28. DC Current Gain
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
f = 1 MHz
IE = 0 V
TA = 25°C
5 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 29. Output Capacitance
100
75°C
10
25°C
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
01
23 4567 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 30. Output Current versus Input Voltage
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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10
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