MT48LC4M32B2P-7 Ver la hoja de datos (PDF) - Micron Technology

Número de pieza

componentes Descripción

Fabricante

MT48LC4M32B2P-7

1 Meg x 32 x 4 Banks SDR SDRAM

Micron Technology 

128Mb: x32 SDRAM

Temperature and Thermal Impedance

Table 6: Thermal Impedance Simulated Values

Die

Revision

G

L

Package

86-pin TSOP

90-ball VFBGA

86-pin TSOP

90-ball VFBGA

Substrate

Low Con-

ductivity

High Con-

ductivity

Low Con-

ductivity

High Con-

ductivity

Low Con-

ductivity

High Con-

ductivity

Low Con-

ductivity

High Con-

ductivity

ΘJA (°C/W)

Airflow =

0m/s

82.2

55

64.6

48.2

122.3

101.9

76.8

56.3

ΘJA (°C/W)

Airflow =

1m/s

65

47.2

50.8

41.1

105.6

93.5

63.1

49.6

ΘJA (°C/W)

Airflow =

2m/s

59.7

ΘJB (°C/W) ΘJC (°C/W)

49.4

10.3

45.1

40.6

45.3

37.5

1.8

38.1

32.1

98.1

89.5

20.7

88.8

87.6

63.1

50.1

10.4

49.6

43.5

Notes:

1. For designs expected to last beyond the die revision listed, contact Micron Applications

Engineering to confirm thermal impedance values.

2. Thermal resistance data is sampled from multiple lots, and the values should be viewed

as typical.

3. These are estimates; actual results may vary.

Figure 6: Example: Temperature Test Point Location, 54-Pin TSOP (Top View)

Test point

11.11mm

22.22mm

10.16mm

5.08mm

Note: 1. Package may or may not be assembled with a location notch.

PDF: 09005aef80872800

128mb_x32_sdram.pdf - Rev. U 04/13 EN

15

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2001 Micron Technology, Inc. All rights reserved.

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