MT46V128M4TG-8 Ver la hoja de datos (PDF) - Micron Technology

Número de pieza

componentes Descripción

Fabricante

MT46V128M4TG-8

512Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

TABLE OF CONTENTS

Functional Block Diagram – 128 Meg x 4 ............. 4

Functional Block Diagram – 64 Meg x 8 ............... 5

Functional Block Diagram – 32 Meg x 16 ............. 6

Pin Descriptions ...................................................... 7

Functional Description ......................................... 9

Initialization ...................................................... 9

Register Definition ............................................. 9

Mode Register ............................................... 9

Burst Length ............................................ 9

Burst Type ................................................ 10

Read Latency ........................................... 11

Operating Mode ...................................... 11

Extended Mode Register ............................... 12

DLL Enable/Disable ................................. 12

Commands ............................................................ 13

Truth Table 1 (Commands) ....................................... 13

Truth Table 1A (DM Operation) ................................. 13

Deselect .............................................................. 14

No Operation (NOP) .......................................... 14

Load Mode Register ........................................... 14

Active ................................................................ 14

Read ................................................................ 14

Write ................................................................ 14

Precharge ........................................................... 14

Auto Precharge .................................................. 14

Burst Terminate ................................................. 14

Auto Refresh ...................................................... 15

Self Refresh ......................................................... 15

Operation .............................................................. 16

Bank/Row Activation ....................................... 16

Reads ................................................................ 17

Read Burst .................................................... 18

Consecutive Read Bursts .............................. 19

Nonconsecutive Read Bursts ....................... 20

Random Read Accesses ................................ 21

Terminating a Read Burst ............................ 23

Read to Write ............................................... 24

Read to Precharge ......................................... 25

Writes ................................................................ 26

Write Burst .................................................... 27

Consecutive Write to Write ......................... 28

Nonconsecutive Write to Write .................. 29

ADVANCE

512Mb: x4, x8, x16

DDR SDRAM

Random Writes ............................................ 30

Write to Read – Uninterrupting .................. 31

Write to Read – Interrupting ....................... 32

Write to Read – Odd, Interrupting ............. 33

Write to Precharge – Uninterrupting .......... 34

Write to Precharge – Interrupting ............... 35

Write to Precharge – Odd, Interrupting ...... 36

Precharge ........................................................... 37

Power-Down ..................................................... 37

Truth Table 2 (CKE) ................................................. 38

Truth Table 3 (Current State, Same Bank) ..................... 39

Truth Table 4 (Current State, Different Bank) ................. 41

Operating Conditions

Absolute Maximum Ratings .................................... 43

DC Electrical and Operating Conditions ..................... 43

AC Input Operating Conditions ........................... 43

Clock Input Operating Conditions ....................... 44

Capacitance – x4, x8 .............................................. 45

IDD Specifications and Conditions – x4, x8 ........... 45

Capacitance – x16 .................................................. 46

IDD Specifications and Conditions – x16 ............... 46

AC Electrical Characteristics (Timing Table) .......... 47

Slew Rate Derating Table ....................................... 48

Data Valid Window Derating ............................... 52

Voltage and Timing Waveforms

Nominal Output Drive Curves ......................... 53

Reduced Output Drive Curves (x16 only) ........ 54

Output Timing – tDQSQ and tQH - x4, x8 ...... 55

Output Timing – tDQSQ and tQH - x16 .......... 56

Output Timing – tAC and tDQSCK ................. 57

Input Timing ..................................................... 57

Input Voltage .................................................... 58

Initialize and Load Mode Registers .................. 59

Power-Down Mode .......................................... 60

Auto Refresh Mode ........................................... 61

Self Refresh Mode ............................................. 62

Reads

Bank Read - Without Auto Precharge ........ 63

Bank Read - With Auto Precharge .............. 64

Writes

Bank Write – Without Auto Precharge ....... 65

Bank Write – With Auto Precharge ............. 66

Write – DM Operation ................................ 67

66-pin TSOP (TG) dimensions ............................... 68

512Mb: x4, x8, x16 DDR SDRAM

512Mx4x8x16DDR_B.p65 – Rev. B; Pub 4/01

3

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

Share Link: