BLT71/8 Ver la hoja de datos (PDF) - Philips Electronics
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BLT71/8 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLT71/8
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
CW, class-AB
900
4.8
3
PL
Gp
ηC
(W)
(dB)
(%)
≥11
≥55
1.2
typ. 13
typ. 63
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts = 60 °C.
16
handbook, halfpage
Gp
(dB)
12
8
MGD191
80
ηC
ηC
(%)
Gp
60
40
4
20
0
0
0
0.4
0.8
1.2
1.6
2.0
PL (W)
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
2.0
handbook, halfpage
PL
(W)
1.6
MGD192
1.2
0.8
0.4
0
0
50
100
150
200
PIN (mW)
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
Fig.5 Load power as a function of input power;
typical values.
1997 Oct 14
4
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