BLT71/8 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BLT71/8

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLT71/8

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to

soldering point

CONDITIONS

Pdis = 2.9 W; Ts = 60 °C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

MAX.

40

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICES

hFE

Cc

Cre

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector leakage current

DC current gain

collector capacitance

feedback capacitance

open emitter; IC = 0.5 mA

open base; IC = 10 mA

open collector; IE = 0.1 mA

VCE = 8 V; VBE = 0

VCE = 5 V; IC = 100 mA

VCB = 4.8 V; IE = ie = 0; f = 1 MHz

VCE = 4.8 V; IC = 0; f = 1 MHz

MIN.

16

8

2.5

−

25

−

−

MAX.

−

−

−

0.1

−

7

5

UNIT

V

V

V

mA

pF

pF

1

handbook, halfpage

IC

(A)

MBK263

(1)

10−110−1

1

Ts = 115 °C.

Fig.2 DC SOAR.

10

102

VCE (V)

handbook1, 5h0alfpage

h FE

100

MLD131

50

0

0

200

400

600

800

IC (mA)

VCE = 4.8 V.

Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.

Fig.3 DC current gain as a function of collector

current; typical values.

1997 Oct 14

3

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