MS2176 Ver la hoja de datos (PDF) - Microsemi Corporation
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MS2176 Datasheet PDF : 4 Pages
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RF PRODUCTS DIVISION
MS2176
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS2176 is a gold metallized silicon NPN pulse power
transistor. The MS2176 is designed for applications requiring high
peak power and low duty cycles within the frequency range of 400 –
500 MHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
65
V
VCES Collector-Emitter Voltage
65
V
VEBO Emitter-Base Voltage
3.5
V
IC
Device Current
21.6
A
PDISS Power Dissipation
TJ
Junction Temperature
875
W
+200
°C
TSTG Storage Temperature
-65 to +150 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.2
°C/W
PIN CONNECTION
1
KEY FEATURES
350 Watts @ 10µSec
Pulse Width, 10%
Duty Cycle
300 Watts @
250µSec Pulse Width
10% Duty Cycle
9.5 dB Min. Gain
Refractory Gold
Metallization
Emitter Ballasting And
Low Thermal
Resistance For
Reliability and
Ruggedness
Infinite VSWR
Capability At
Specified Operating
Conditions
APPLICATIONS/BENEFITS
UHF Pulsed
Applications
2
4
3
1. Collector
2. Base
3. Emitter
4. Base
.400 X .400 2LFL (M106)
hermetically sealed
Copyright 2000
MSC1651.PDF 2001-01-04
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
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