MS1455 Ver la hoja de datos (PDF) - Advanced Power Technology
Número de pieza
componentes Descripción
Fabricante
MS1455 Datasheet PDF : 4 Pages
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RF & MICROWAVE TRANSISTORS
800 - 900 MHz APPLICATIONS
Features
• 836 MHz
• 12.5 VOLTS
• POUT = 45 WATTS
• GP = 4.7 dB MINIMUM
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed for amplifier applications in the
806-866 MHz frequency range. Internal impedance matching
assures optimum gain and efficiency across the entire
frequency band. Gold metalization and emitter ballast resistors
assures infinite VSWR capability and long term reliability.
MS1455
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
PDISS
IC
Power Dissipation
Device Current
TJ
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
053-7078 Rev - 10-2002
Value
36
4.0
18
36
150
9.0
200
-65 to +150
1.2
Unit
V
V
V
V
W
A
°C
°C
°C/W
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