MRFG35003MT1 Ver la hoja de datos (PDF) - Freescale Semiconductor
Número de pieza
componentes Descripción
Fabricante
MRFG35003MT1 Datasheet PDF : 5 Pages
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CHARACTERISTICS
18
45
16
GT
40
14 MRFG35003M @ 2.5 GHz
PAE
35
VDS = 12 Vdc, IDQ = 55 mA
12
f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.857é−136.97_
30
10 ΓL = 0.681é−178.94_
25
8
20
6
15
4
10
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 3. Transducer Gain and Power Added
Efficiency versus Output Power
0
0
−10
−10
IRL
−20 MRFG35003M @ 2.5 GHz
−20
VDS = 12 Vdc, IDQ = 55 mA
−30 f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ACPR
−30
ΓS = 0.857é−136.97_, ΓL = 0.681é−178.94_
−40
−40
−50
−50
−60
0.1
−60
1
Pout, OUTPUT POWER (WATTS)
Figure 4. W - CDMA ACPR and Input Return
Loss versus Output Power
NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown.
16
50
14
40
GT
12
30
MRFG35003M @ 2.45 GHz
10 VDS = 12 Vdc, IDQ = 55 mA
20
8.5 P/A 3GPP W−CDMA
PAE
8
10
6
0
0.01
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 5. Transducer Gain and Power Added
Efficiency versus Output Power
0
0
−10
IRL
−10
−20
−20
MRFG35003M @ 2.45 GHz
−30 VDS = 12 Vdc, IDQ = 55 mA
−30
8.5 P/A 3GPP W−CDMA
−40
−40
ACPR
−50
−50
−60
0.01
0.1
Pout, OUTPUT POWER (WATTS)
Figure 6. W - CDMA ACPR and Input Return
Loss versus Output Power
−60
1
NOTE: Data in Figures 5 and 6 is generated from the test circuit shown.
MRFG35003NT1 MRFG35003MT1 BWA
4
RF Reference Design Data
Freescale Semiconductor
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