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TRA2525

Medium-Current Silicon Rectifiers

ON Semiconductor 

TRA2525 MR3025

100

10–1

RqJC(t) = RqJC • r(t)

Note 1

10–2

0.1

1

10

t, TIME (ms)

Figure 6. Thermal Response

100

300

NOTE 1

Ppk

tp

t1

Ppk

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk is peak of an

equivalent square power pulse

To determine maximum junction temperature of the diode in a given

situation, the following procedure is recommended.

The temperature of the case should be measured using a thermocou-

ple placed on the case at the temperature reference point (see the

outline drawing on page 1). The thermal mass connected to the case

is normally large enough so that it will not significantly respond to heat

surges generated in the diode as a result of pulse operation once

steady state conditions are achieved.

Using the measured value of TC, the junction temperature may be

determined by:

TJ = TC + DTJC

Where DTJC is the increase in junction temperature above the case

temperature, it may be determined by:

DTJC = Ppk @ RqJC [D + (1 – D) @ r(t1 + tp) + r(tp) – r(t1)]

where:

r(t) = normalized value of transient thermal resistance at

time, t, from Figure 6, i.e.:

r(t1 + tp) = normalized value of transient thermal resistance

at time t1 + tp.

1000

100

TJ = 25°C

10

0.1

1

10

100

VR, REVERSE VOLTAGE (V)

Figure 7. Typical Capacitance

1

VF

TJ = 25°C

TFR

VFR

VFR = 1.0 V

VFR = 2.0 V

0.1

1

10

IF, FORWARD CURRENT (A)

Figure 8. Forward Recovery Time

100

IF = 1 A

10

IF = 10 A

IF

0

IR

TJ = 25°C

0.25 IR

TRR

1

0.1

1

10

IR/IF, RATIO OF REVERSE TO FORWARD CURRENT

Figure 9. Reverse Recovery Time

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