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componentes Descripción

Fabricante

MKP1V120

Sidac High Voltage Bidirectional Triggers

ON Semiconductor 

MKP1V120 Series

THERMAL CHARACTERISTICS

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

ZqJL(t) = RqJL • r(t)

DTJL = Ppk RqJL[r(t)]

where:

tp

TIME

DTJL = the increase in junction temperature above the

lead temperature

r(t) = normalized value of transient thermal resistance at

time, t from this figure. For example,

r(tp) = normalized value of transient resistance at time tp.

The temperature of the lead should be

measured using a thermocouple placed on the

lead as close as possible to the tie point. The

thermal mass connected to the tie point is

normally large enough so that it will not

significantly respond to heat surges generated

in the diode as a result of pulsed operation

once steady−state conditions are achieved.

Using the measured value of TL, the junction

temperature may be determined by:

TJ = TL + DTJL

0.5 1.0 2.0

5.0 10

20

50 100 200

500 1.0 k 2.0 k

5.0 k 10 k

t, TIME (ms)

Figure 5. Thermal Response

1.4

1.0

1.2

1.0

0.9

0.8

0.6

0.8

−60 −40 −20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Breakover Voltage

0.4

−60 −40 −20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current

100

10

IPK

10%

tw

1.0

0.1

1.0

10

100

tw, PULSE WIDTH (ms)

Figure 8. Pulse Rating Curve

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