MJE3055T Ver la hoja de datos (PDF) - Inchange Semiconductor

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MJE3055T

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJE3055T

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0

-60

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A

1.1

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A

8.0

V

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

ICEO

Collector Cutoff Current

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 4A ; VCE= 4V

VCE=70V;VEB(off)=-1.5V

VCE=70V;VEB(off)=-1.5V;TC= 150℃

VCE= 30V; IB=B 0

VCB= 70V; IE= 0

VCB= 70V; IE= 0; TC= 150℃

VEB= 5V; IC= 0

1.8

V

1.0

5.0

mA

0.7 mA

1.0

10

mA

5.0 mA

hFE-1

DC Current Gain

IC= 4A ; VCE= 4V

20

100

hFE-2

DC Current Gain

IC= 10A ; VCE= 4V

5

fT

Current Gain-Bandwidth Product

IC= 0.5A; VCE= 10V; f= 500kHz

2.0

MHz

isc Website：www.iscsemi.cn

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