MG100Q2YS65H Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
MG100Q2YS65H Datasheet PDF : 6 Pages
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Switching time – IC
1
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 9.1 W
: Tc = 25°C
: Tc = 125°C
ton
0.1
tr
0.01
10
td (on)
30
100
Collector current IC (A)
MG100Q2YS65H
Switching time – IC
1
td (off)
toff
0.1
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 9.1 W
0.01
10
30
tf
: Tc = 25°C
: Tc = 125°C
100
Collector current IC (A)
Switching time – RG
1
: Tc = 25°C
: Tc = 125°C
ton
td (on)
0.1
tr
0.01
0
Common emitter
VCC = 600 V
IC = 100 A
VGE = ±15 V
10
20
30
40
50
60
Gate resistance RG (9)
Switching time – RG
10
Common emitter
VCC = 600 V
IC = 100 A
VGE = ±15 V
: Tc = 25°C
: Tc = 125°C
1 toff
td (off)
0.1
tf
0.01
0
10
20
30
40
50
60
Gate resistance RG (9)
100
10
1
0.1
1
Switching loss – IC
: Tc = 25°C
: Tc = 125°C
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 9.1 W
Eon
Eoff
Edsw
10
100
Collector current IC (A)
Switching loss – RG
100
Common emitter
VCC = 600 V
IC = 100 A
VGE = ±15 V
Eon
Eoff
10
: Tc = 25°C
: Tc = 125°C
1
1
10
Edsw
100
Gate resistance RG (9)
4
2002-10-04
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