MG150Q2YS65H Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
MG150Q2YS65H Datasheet PDF : 6 Pages
| |||
300
250
200
150
100
50
0
0
IC – VCE (sat)
20 V
18 V
15 V
12 V
Common emitter
Tc = 25°C
10 V
VGE = 8 V
2
4
6
8
10
Collector-emitter voltage VCE (V)
MG150Q2YS65H
IC – VCE (sat)
300
Common emitter
18 V
Tc = 125°C
250
20 V
15 V
12 V
200
10 V
150
100
50
VGE = 8 V
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
VCE – VGE
12
Common emitter
Tc = 25°C
10
8
6
IC = 300 A
4
150 A
2
75 A
0
0
4
8
12
16
20
Gate-emitter voltage VGE (V)
VCE – VGE
12
Common emitter
Tc = 125°C
10
8
6
IC = 300 A
4
150 A
2
75 A
0
0
4
8
12
16
20
Gate-emitter voltage VGE (V)
IC – VGE
300
Common emitter
VCE = 5 V
250
Tc = 125°C
200
150
100
25°C
50
-40°C
0
0
4
8
12
16
20
Gate-emitter voltage VGE (V)
IF – VF
300
Common cathode
VGE = 0
250
-40°C
200
150
100
125°C
Tc = 25°C
50
0
0
1
2
3
4
5
Forward voltage VF (V)
3
2002-10-04
Share Link: 