Freescale Semiconductor, Inc.
DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted. Typical
values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are into the
pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
BUS Voltage Rise Time (Note 8) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
trise (BUS)
Wave) (see Figure 4)
BUS Load = 3,300 pF and 1.38 kΩ to GND
9.0
BUS Load = 16,500 pF and 300 Ω to GND
9.0
BUS Voltage Fall Time (Note 8) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
tfall (BUS)
Wave) (see Figure 4)
BUS Load = 3,300 pF and 1.38 kΩ to GND
9.0
BUS Load = 16,500 pF and 300 Ω to GND
9.0
11.15
11.86
10.50
11.17
µs
15
15
µs
15
15
Pulse Width Distortion Time (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave) tpwd(BUS)
µs
(see Figure 5)
BUS Load = 3,300 pF and 1.38 kΩ to GND
35
62
93
Propagation Delay
Tx Threshold to Rx Threshold
tpd (BUS)
µs
–
17.7
25
Tx
Tx to BUS Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (Figure 6)
4X Mode
Normal Mode
tTxDelay
–
µs
2.6
4.0
13
17.3
24
SLEEP to Tx Setup Time (Figure 6)
Rx
tSLEEPTxSU
80
40
–
µs
Rx Output Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (see Figure 7)
Low-to-Output High
High-to-Output Low
tRxDelay / L–H
–
tRxDelay / H–L
–
µs
0.11
2.0
0.38
2.0
Rx Output Transition Time (CRx = 50 pF to GND, 10% and 90% Points)
(see Figure 8)
Low-to-Output High
High-to-Output Low
tRxTrans / L–H
–
tRxTrans /H–L
–
µs
0.34
1.0
0.08
1.0
Rx Output Transition Time (Note 9) (CRx = 50 pF to GND, SLEEP = 0 V, 10% and
90% Points) (see Figure 8)
Low-to-Output High
High-to-Output Low
tRxTrans / L–H
–
tRxTrans /H–L
–
µs
0.32
5.0
0.08
5.0
Notes
8. Typical is the parameter's approximate average value with VBAT = 13 V, TA = 25°C.
9. Rx Output Transition Time from a sleep state.
MOTOROLA ANALOG INTEGRATED CIRFCoUIrTMDEoVrICeEIDnAfoTArmation On This Product,
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